1999. 11. 30 1/2 semiconductor technical data 2n5400s epitaxial planar pnp transistor revision no : 2 general purpose application. high voltage application. features high collector breakdwon voltage : v cbo =-130v, v ceo =-120v low leakage current. : i cbo =-100na(max.) @v cb =-100v low saturation voltage : v ce(sat) =-0.5v(max.) @i c =-50ma, i b =-5ma low noise : nf=8db (max.) maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ characteristic symbol rating unit collector-base voltage v cbo -130 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -600 ma base current i b -100 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 note : * package mounted on 99.5% alumina 10 8 0.6 ) type name marking lot no. zn
1999. 11. 30 2/2 revision no : 2 electrical characteristics (ta=25 ) 2n5400s * pulse test : pulse width 300 s, duty cycle 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-100v, i e =0 - - -100 na v cb =-100v, i e =0, ta=100 - - -100 a emitter cut-off current i ebo v eb =-3v, i c =0 - - -50 na collector-base breakdown voltage v (br)cbo i c =-0.1ma, i e =0 -130 - - v collector-emitter * breakdown voltage v (br)ceo i c =-1ma, i b =0 -120 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v dc current gain * h fe (1) v ce =-5v, i c =-1ma 30 - - h fe (2) v ce =-5v, i c =-10ma 40 - 180 h fe (3) v ce =-5v, i c =-50ma 40 - - collector-emitter * saturation voltage v ce(sat) 1 i c =-10ma, i b =-1ma - - -0.2 v v ce(sat) 2 i c =-50ma, i b =-5ma - - -0.5 base-emitter * saturation voltage v be(sat) 1 i c =-10ma, i b =-1ma - - -1.0 v v be(sat) 2 i c =-50ma, i b =-5ma - - -1.0 transition frequency f t v ce =-10v, i c =-10ma, f=100mhz 100 - 400 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 6 pf small-signal current gain h fe v ce =-10v, i c =-1ma, f=1khz 30 - 200 noise figure nf v ce =-5v, i c =-250 a rg=1k , f=10hz 15.7khz - - 8 db
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